Load Switches
Technical Information
NX3P190

Logic controlled high-side power switch

The NX3P190 is a high-side load switch which features a low ON resistance P-channel MOSFET that supports more than 500 mA of continuous current. Designed for operation from 1.1 V to 3.6 V, it is used in power domain isolation applications to reduce power dissipation and extend battery life. The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers. The NX3P190 is ideal for portable, battery operated applications due to low ground current and ultra-low shutdown current.

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NX3P2902B

Logic controlled high-side power switch

The NX3P2902B is a high-side load switch which features a low ON resistance P‑channel MOSFET. The MOSFET supports more than 500 mA of continuous current and an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is used in power domain isolation applications to reduce power dissipation and extend battery life. The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers. The NX3P2902B is ideal for portable, battery operated applications due to low ground current and OFF-state current.

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NX3P1108

Logic controlled high-side power switch

The NX3P1108 is a high-side load switch which features a low ON resistance P-channel MOSFET that supports more than 1.5 A of continuous current. It has an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 0.9 V to 3.6 V, it is used in power domain isolation applications to reduce power dissipation and extend battery life. The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers. The NX3P1108 is ideal for portable, battery operated applications due to low ground current and ultra-low OFF-state current.

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NX5P1100

Logic controlled high-side power switch

The NX5P1100 is an advanced power switch and ESD-protection device for USB OTG applications. It includes under voltage and over voltage lockout, over-current, over-temperature, reverse bias and in-rush current protection circuits. These circuits are designed to isolate a VBUS OTG voltage source from a VBUS interface pin automatically when a fault condition occurs. The device features two power switch terminals, one input (VINT) and one output (VBUS). It has a current limit input (ILIM) for defining the over-current and in-rush current limit. A voltage detect output (VDET) is used to determine when VINT is in the correct voltage range. An open-drain fault output (FAULT) indicates when a fault condition has occurred, and an enable input (EN) controls the state of the switch. When EN is set LOW the device enters a low-power mode, disabling all protection circuits except the undervoltage lockout. The low-power mode can be entered at any time unless the over temperature protection circuit has been triggered.

Designed for operation from 3 V to 5.5 V, it is used in power domain isolation applications to protect from out of range operation. The enable input includes integrated logic level translation making the device compatible with lower voltage processors and controllers.

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NX5P2924B

Logic controlled high-side power switch

The NX5P2924B is a high-side load switch which features a low ON resistance N-channel MOSFET with controlled slew rate that supports 2.5 A of continuous current. Designed for operation from 0.8 V to 5.5 V, it is used in power domain isolation applications to reduce power dissipation and extend battery life. The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers. The NX5P2924B is ideal for portable, battery operated applications due to low ground current.

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NX5P2090

Logic controlled high-side power switch

The NX5P2090 is an advanced power switch for USB OTG applications. The device includes under voltage and over voltage lockout, over-current, over-temperature, reverse bias and in-rush current protection circuits designed to automatically isolate a VBUS OTG voltage source from a VBUS interface pin when a fault condition occurs. The device features two power switch terminals, one input (VINT) and one output (VBUS); a current limit input (ILIM) for defining the over-current and in-rush current limit; a voltage detect output (VDET) to monitor the voltage level on VBUS; an open-drain fault output (FAULT) to indicate when a fault condition has occurred and an enable input (EN) to control the state of the switch. When EN is set LOW the device enters a low power mode, disabling all protection circuits accept the under-voltage lockout. The low power mode can be entered at anytime unless the over temperature protection circuit has been triggered.

Designed for operation from 3 V to 5.5 V, it is used in power domain isolation applications to protect from out of range operation. The enable input includes integrated logic level translation making the device compatible with lower voltage processors and controllers.

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NX3P191

Logic controlled high-side power switch

The NX3P191 is a high-side load switch which features a low ON resistance P-channel MOSFET with input inrush current reduction that supports more than 500 mA of continuous current and an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is used in power domain isolation applications to reduce power dissipation and extend battery life. The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers. The NX3P191 is ideal for portable, battery operated applications due to low ground current and ultra-low shutdown current.

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NX3P1107

Logic controlled high-side power switch

The NX3P1107 is a high-side load switch which features a low ON resistance P-channel MOSFET that supports more than 1.5 A of continuous current. Designed for operation from 0.9 V to 3.6 V, it is used in power domain isolation applications to reduce power dissipation and extend battery life. The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers. The NX3P1107 is ideal for portable, battery operated applications due to low ground current and ultra-low OFF-state current.

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NX5P1000

Logic controlled high-side power switch

The NX5P1000 is an advanced power switch and ESD- protection device for USB OTG applications. The device includes under voltage and over voltage lockout, over-current, over-temperature, reverse bias and in-rush current protection circuits. These circuits are designed to isolate a VBUS OTG voltage source automatically from a VBUS interface pin when a fault condition occurs. The device features two power switch terminals, one input (VINT) and one output (VBUS). It has a current limit input (ILIM) for defining the over-current and in-rush current limit. A voltage detect output (VDET) is used to determine when VINT is in the correct voltage range. An open-drain fault output (FAULT) indicates when a fault condition has occurred and an enable input (EN) controls the state of the switch. When EN is set LOW the device enters a low-power mode, disabling all protection circuits except the undervoltage lockout. The low-power mode can be entered at anytime unless the over temperature protection circuit has been triggered.

Designed for operation from 3 V to 5.5 V, it is used in power domain isolation applications to protect from out of range operation. The enable input includes integrated logic level translation making the device compatible with lower voltage processors and controllers.

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NX5P2924

Logic controlled high-side power switch

The NX5P2924 is a high-side load switch which features a low ON resistance N-channel MOSFET with controlled slew rate that supports 2.5 A of continuous current. Designed for operation from 0.8 V to 5.5 V, it is used in power domain isolation applications to reduce power dissipation and extend battery life. The enable logic includes integrated logic level translation making the device compatible with lower voltage processors and controllers. The NX5P2924 is ideal for portable, battery operated applications due to low ground current.

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NX5P3001

Bidirectional high-side power switch for charger and USB‑OTG combined applications

The NX5P3001 is an advanced bidirectional power switch and ESD-protection device for combined USB‑OTG and charger port applications. It includes undervoltage lockout, overvoltage lockout and overtemperature protection circuits designed to automatically isolate the power switch terminals when a fault condition occurs.

The device features two power switch input/output terminals (VBUSI and VBUSO), an open-drain acknowledge output (ACK), an enable input which includes logic level translation (EN) and low capacitance Transient Voltage Suppression (TVS) type ESD‑clamps for USB data and ID pins.

When EN is set HIGH the device enters a low-power mode, disabling all protection circuits. When used in combined charger and USB‑OTG applications the 30 V tolerant VBUSI switch terminal is used as the supply and switch input when charging, for USB‑OTG the VBUSO switch terminal is used as the supply and switch input.

Designed for operation from 3.2 V to 6.35 V, it is used in battery charging and power domain isolation applications to reduce power dissipation and extend battery life.

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NX18P3001

Bidirectional power switch for charger and USB-OTG combinations

The NX18P3001 is an advanced bidirectional power switch and ESD- protection device for combined USB-OTG and charger port applications. It includes undervoltage lockout, overvoltage lockout and overtemperature protection circuits designed to automatically isolate the power switch terminals when a fault condition occurs.

The device features two power switch input/output terminals (VBUSI and VBUSO), an open-drain acknowledge output (ACK), an enable input which includes logic level translation (EN) and low capacitance Transient Voltage Suppression (TVS) type ESD clamps for USB data and ID pins.

When EN is set HIGH the device enters a low-power mode, disabling all protection circuits. When used in combined charger and USB-OTG applications the 30 V tolerant VBUSI switch terminal is used as the supply and switch input when charging, for USB-OTG the VBUSO switch terminal is used as the supply and switch input.

Designed for operation from 3.2 V to 17.5 V, it is used in battery charging and power domain isolation applications to reduce power dissipation and extend battery life.

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